Impact ionization coefficients for electrons and holes in strained In0.2Ga0.8As and In0.15Ga0.63Al0.22As channels embedded in Al0.3Ga0.7As
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چکیده
We have measured impact ionization coefficients, a and p, in 150 A pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. a and 0 in lattice-matched GaAs layers are found to be lower than those in strained Ino.zGacsAs and higher than those in strained Ina15Gac,,A10~,,As. fl is larger than a in all the samples. The results are discussed in terms of the changes in the band structure due to biaxial strain.
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تاریخ انتشار 1999